inchange semiconductor product specification silicon npn power transistors 2sD1413 description with to-220fa package high dc current gain low saturation voltage complement to type 2sb1023 darlington applications power amplifier and switching applications hammer drive,pulse motor drive applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector -emitter voltage open base 40 v v ebo emitter-base voltage open collector 5 v i c collector current 3 a i b base current 0.5 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2sD1413 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma; i b =0 40 v v cesat collector-emitter saturation voltage i c =2a ;i b =4ma 1.5 v v besat base-emitter saturation voltage i c =2a ;i b =4ma 2.0 v i cbo collector cut-off current v cb =60v; i e =0 20 a i ebo emitter cut-off current v eb =5v; i c =0 2.5 ma h fe-1 dc current gain i c =1a ; v ce =2v 2000 h fe-2 dc current gain i c =3a ; v ce =2v 1000 switching times t on turn-on time 0.1 s t stg storage time 1.0 s t f fall time i b1 =-i b2 =6ma v cc =30v ,r l =10 0.2 s
inchange semiconductor product specification 3 silicon npn power transistors 2sD1413 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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